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SI9933CDY-T1-GE3

SI9933CDY-T1-GE3

For Reference Only

Part Number SI9933CDY-T1-GE3
PNEDA Part # SI9933CDY-T1-GE3
Description MOSFET 2P-CH 20V 4A 8-SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 1,269,108
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI9933CDY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI9933CDY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI9933CDY-T1-GE3, SI9933CDY-T1-GE3 Datasheet (Total Pages: 9, Size: 203.43 KB)
PDFSI9933CDY-T1-E3 Datasheet Cover
SI9933CDY-T1-E3 Datasheet Page 2 SI9933CDY-T1-E3 Datasheet Page 3 SI9933CDY-T1-E3 Datasheet Page 4 SI9933CDY-T1-E3 Datasheet Page 5 SI9933CDY-T1-E3 Datasheet Page 6 SI9933CDY-T1-E3 Datasheet Page 7 SI9933CDY-T1-E3 Datasheet Page 8 SI9933CDY-T1-E3 Datasheet Page 9

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SI9933CDY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4A
Rds On (Max) @ Id, Vgs58mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds665pF @ 10V
Power - Max3.1W
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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