Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIA417DJ-T1-GE3

SIA417DJ-T1-GE3

For Reference Only

Part Number SIA417DJ-T1-GE3
PNEDA Part # SIA417DJ-T1-GE3
Description MOSFET P-CH 8V 12A SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,082
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA417DJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA417DJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIA417DJ-T1-GE3, SIA417DJ-T1-GE3 Datasheet (Total Pages: 7, Size: 93.57 KB)
PDFSIA417DJ-T1-GE3 Datasheet Cover
SIA417DJ-T1-GE3 Datasheet Page 2 SIA417DJ-T1-GE3 Datasheet Page 3 SIA417DJ-T1-GE3 Datasheet Page 4 SIA417DJ-T1-GE3 Datasheet Page 5 SIA417DJ-T1-GE3 Datasheet Page 6 SIA417DJ-T1-GE3 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIA417DJ-T1-GE3 Datasheet
  • where to find SIA417DJ-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIA417DJ-T1-GE3
  • SIA417DJ-T1-GE3 PDF Datasheet
  • SIA417DJ-T1-GE3 Stock

  • SIA417DJ-T1-GE3 Pinout
  • Datasheet SIA417DJ-T1-GE3
  • SIA417DJ-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIA417DJ-T1-GE3 Price
  • SIA417DJ-T1-GE3 Distributor

SIA417DJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs23mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 5V
Vgs (Max)±5V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 4V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 19W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Single
Package / CasePowerPAK® SC-70-6

The Products You May Be Interested In

PSMN3R5-25MLDX

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

18.9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1334pF @ 12V

FET Feature

Schottky Diode (Body)

Power Dissipation (Max)

65W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

RJK1576DPA-00#J5A

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

25A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

58mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Power Dissipation (Max)

65W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

WPAK(3F) (5x6)

Package / Case

8-PowerVDFN

IXFH21N50Q

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

250mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

84nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 25V

FET Feature

-

Power Dissipation (Max)

280W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3

Manufacturer

IXYS

Series

Polar™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

27A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

320mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

6.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

225nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

14200pF @ 25V

FET Feature

-

Power Dissipation (Max)

690W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC

STF14NM65N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 50V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

Recently Sold

AD7495AR

AD7495AR

Analog Devices

IC ADC 12BIT SAR 8SOIC

74AHCT125PW,118

74AHCT125PW,118

Nexperia

IC BUF NON-INVERT 5.5V 14TSSOP

FIN1019MTCX

FIN1019MTCX

ON Semiconductor

IC TRANSCEIVER FULL 1/1 14TSSOP

MBR0540-TP

MBR0540-TP

Micro Commercial Co

DIODE SCHOTTKY 40V 500MA SOD123

0452007.MRL

0452007.MRL

Littelfuse

FUSE BRD MNT 7A 72VAC 60VDC 2SMD

AD7870JP

AD7870JP

Analog Devices

IC ADC 12BIT SAR 28PLCC

BLM31PG500SN1L

BLM31PG500SN1L

Murata

FERRITE BEAD 50 OHM 1206 1LN

MCH3478-TL-W

MCH3478-TL-W

ON Semiconductor

MOSFET N-CH 30V 2A MCPH3

FPF2123

FPF2123

ON Semiconductor

IC LOAD SWITCH FULL FUNC SOT23-5

NL17SZ14DFT2G

NL17SZ14DFT2G

ON Semiconductor

IC INVERTER SCHMITT 1CH SC88A

FDD86540

FDD86540

ON Semiconductor

MOSFET N-CH 60V 50A DPAK-3

IXBT12N300HV

IXBT12N300HV

IXYS

IGBT 3000V 30A 160W TO268