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SIA417DJ-T1-GE3

SIA417DJ-T1-GE3

For Reference Only

Part Number SIA417DJ-T1-GE3
PNEDA Part # SIA417DJ-T1-GE3
Description MOSFET P-CH 8V 12A SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,082
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA417DJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA417DJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIA417DJ-T1-GE3, SIA417DJ-T1-GE3 Datasheet (Total Pages: 7, Size: 93.57 KB)
PDFSIA417DJ-T1-GE3 Datasheet Cover
SIA417DJ-T1-GE3 Datasheet Page 2 SIA417DJ-T1-GE3 Datasheet Page 3 SIA417DJ-T1-GE3 Datasheet Page 4 SIA417DJ-T1-GE3 Datasheet Page 5 SIA417DJ-T1-GE3 Datasheet Page 6 SIA417DJ-T1-GE3 Datasheet Page 7

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SIA417DJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs23mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 5V
Vgs (Max)±5V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 4V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 19W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Single
Package / CasePowerPAK® SC-70-6

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