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SIA445EDJT-T1-GE3

SIA445EDJT-T1-GE3

For Reference Only

Part Number SIA445EDJT-T1-GE3
PNEDA Part # SIA445EDJT-T1-GE3
Description MOSFET P-CH 20V 12A SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,020
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA445EDJT-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA445EDJT-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIA445EDJT-T1-GE3, SIA445EDJT-T1-GE3 Datasheet (Total Pages: 10, Size: 332.79 KB)
PDFSIA445EDJT-T1-GE3 Datasheet Cover
SIA445EDJT-T1-GE3 Datasheet Page 2 SIA445EDJT-T1-GE3 Datasheet Page 3 SIA445EDJT-T1-GE3 Datasheet Page 4 SIA445EDJT-T1-GE3 Datasheet Page 5 SIA445EDJT-T1-GE3 Datasheet Page 6 SIA445EDJT-T1-GE3 Datasheet Page 7 SIA445EDJT-T1-GE3 Datasheet Page 8 SIA445EDJT-T1-GE3 Datasheet Page 9 SIA445EDJT-T1-GE3 Datasheet Page 10

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SIA445EDJT-T1-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs16.7mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs69nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds2180pF @ 10V
FET Feature-
Power Dissipation (Max)19W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Single
Package / CasePowerPAK® SC-70-6

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