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SIA446DJ-T1-GE3

SIA446DJ-T1-GE3

For Reference Only

Part Number SIA446DJ-T1-GE3
PNEDA Part # SIA446DJ-T1-GE3
Description MOSFET N-CH 150V 7.7A SC70-6L
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,658
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA446DJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA446DJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIA446DJ-T1-GE3, SIA446DJ-T1-GE3 Datasheet (Total Pages: 9, Size: 262.88 KB)
PDFSIA446DJ-T1-GE3 Datasheet Cover
SIA446DJ-T1-GE3 Datasheet Page 2 SIA446DJ-T1-GE3 Datasheet Page 3 SIA446DJ-T1-GE3 Datasheet Page 4 SIA446DJ-T1-GE3 Datasheet Page 5 SIA446DJ-T1-GE3 Datasheet Page 6 SIA446DJ-T1-GE3 Datasheet Page 7 SIA446DJ-T1-GE3 Datasheet Page 8 SIA446DJ-T1-GE3 Datasheet Page 9

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SIA446DJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesThunderFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs177mOhm @ 3A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds230pF @ 75V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 19W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Single
Package / CasePowerPAK® SC-70-6

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