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SIA519EDJ-T1-GE3

SIA519EDJ-T1-GE3

For Reference Only

Part Number SIA519EDJ-T1-GE3
PNEDA Part # SIA519EDJ-T1-GE3
Description MOSFET N/P-CH 20V 4.5A SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 1,107,180
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA519EDJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA519EDJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIA519EDJ-T1-GE3, SIA519EDJ-T1-GE3 Datasheet (Total Pages: 14, Size: 316.4 KB)
PDFSIA519EDJ-T1-GE3 Datasheet Cover
SIA519EDJ-T1-GE3 Datasheet Page 2 SIA519EDJ-T1-GE3 Datasheet Page 3 SIA519EDJ-T1-GE3 Datasheet Page 4 SIA519EDJ-T1-GE3 Datasheet Page 5 SIA519EDJ-T1-GE3 Datasheet Page 6 SIA519EDJ-T1-GE3 Datasheet Page 7 SIA519EDJ-T1-GE3 Datasheet Page 8 SIA519EDJ-T1-GE3 Datasheet Page 9 SIA519EDJ-T1-GE3 Datasheet Page 10 SIA519EDJ-T1-GE3 Datasheet Page 11

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SIA519EDJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.5A
Rds On (Max) @ Id, Vgs40mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds350pF @ 10V
Power - Max7.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual

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