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SIA537EDJ-T1-GE3

SIA537EDJ-T1-GE3

For Reference Only

Part Number SIA537EDJ-T1-GE3
PNEDA Part # SIA537EDJ-T1-GE3
Description MOSFET N/P-CH 12V/20V SC-70-6L
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,420
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA537EDJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA537EDJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIA537EDJ-T1-GE3, SIA537EDJ-T1-GE3 Datasheet (Total Pages: 14, Size: 397.08 KB)
PDFSIA537EDJ-T1-GE3 Datasheet Cover
SIA537EDJ-T1-GE3 Datasheet Page 2 SIA537EDJ-T1-GE3 Datasheet Page 3 SIA537EDJ-T1-GE3 Datasheet Page 4 SIA537EDJ-T1-GE3 Datasheet Page 5 SIA537EDJ-T1-GE3 Datasheet Page 6 SIA537EDJ-T1-GE3 Datasheet Page 7 SIA537EDJ-T1-GE3 Datasheet Page 8 SIA537EDJ-T1-GE3 Datasheet Page 9 SIA537EDJ-T1-GE3 Datasheet Page 10 SIA537EDJ-T1-GE3 Datasheet Page 11

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SIA537EDJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)12V, 20V
Current - Continuous Drain (Id) @ 25°C4.5A
Rds On (Max) @ Id, Vgs28mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds455pF @ 6V
Power - Max7.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual

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TrenchFET®

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Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.7A (Ta), 4.5A (Tc)

Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

1.9W (Ta), 6.5W (Tc)

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Mounting Type

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