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SIA777EDJ-T1-GE3

SIA777EDJ-T1-GE3

For Reference Only

Part Number SIA777EDJ-T1-GE3
PNEDA Part # SIA777EDJ-T1-GE3
Description MOSFET N/P-CH 20V/12V SC70-6L
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,562
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 14 - May 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA777EDJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA777EDJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIA777EDJ-T1-GE3, SIA777EDJ-T1-GE3 Datasheet (Total Pages: 12, Size: 180.45 KB)
PDFSIA777EDJ-T1-GE3 Datasheet Cover
SIA777EDJ-T1-GE3 Datasheet Page 2 SIA777EDJ-T1-GE3 Datasheet Page 3 SIA777EDJ-T1-GE3 Datasheet Page 4 SIA777EDJ-T1-GE3 Datasheet Page 5 SIA777EDJ-T1-GE3 Datasheet Page 6 SIA777EDJ-T1-GE3 Datasheet Page 7 SIA777EDJ-T1-GE3 Datasheet Page 8 SIA777EDJ-T1-GE3 Datasheet Page 9 SIA777EDJ-T1-GE3 Datasheet Page 10 SIA777EDJ-T1-GE3 Datasheet Page 11

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SIA777EDJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V, 12V
Current - Continuous Drain (Id) @ 25°C1.5A, 4.5A
Rds On (Max) @ Id, Vgs225mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max5W, 7.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual

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