SIA906EDJ-T1-GE3
For Reference Only
| Part Number | SIA906EDJ-T1-GE3 |
| PNEDA Part # | SIA906EDJ-T1-GE3 |
| Description | MOSFET 2N-CH 20V 4.5A SC70-6 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 218,982 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 9 - May 14 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SIA906EDJ-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SIA906EDJ-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SIA906EDJ-T1-GE3 Datasheet
- where to find SIA906EDJ-T1-GE3
- Vishay Siliconix
- Vishay Siliconix SIA906EDJ-T1-GE3
- SIA906EDJ-T1-GE3 PDF Datasheet
- SIA906EDJ-T1-GE3 Stock
- SIA906EDJ-T1-GE3 Pinout
- Datasheet SIA906EDJ-T1-GE3
- SIA906EDJ-T1-GE3 Supplier
- Vishay Siliconix Distributor
- SIA906EDJ-T1-GE3 Price
- SIA906EDJ-T1-GE3 Distributor
SIA906EDJ-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 3.9A, 4.5V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 10V |
| Power - Max | 7.8W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
The Products You May Be Interested In
|
Manufacturer Diodes Incorporated Series - FET Type 2 N-Channel (Dual) Common Drain FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6.1A Rds On (Max) @ Id, Vgs 23mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id 1.05V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 143pF @ 10V Power - Max 920mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerUDFN Supplier Device Package U-DFN3030-8 |
Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 1.6A (Ta) Rds On (Max) @ Id, Vgs 270mOhm @ 650mA, 4.5V Vgs(th) (Max) @ Id 900mV @ 40µA Gate Charge (Qg) (Max) @ Vgs 3.07nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 161pF @ 15V Power - Max 760mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package TSOT-26 |
Manufacturer Infineon Technologies Series HEXFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 15A Rds On (Max) @ Id, Vgs 6.6mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 1380pF @ 15V Power - Max 2.7W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case DirectFET™ Isometric MA Supplier Device Package DIRECTFET™ MA |
Manufacturer Diodes Incorporated Series - FET Type 2 P-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.5A (Ta) Rds On (Max) @ Id, Vgs 50mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 752pF @ 15V Power - Max 1.54W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-UDFN Exposed Pad Supplier Device Package U-DFN2020-6 (Type B) |
Manufacturer ON Semiconductor Series - FET Type 2 N-Channel (Dual) Asymmetrical FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11.7A, 14.9A Rds On (Max) @ Id, Vgs 5.4mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1252pF @ 15V Power - Max 1.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerTDFN Supplier Device Package 8-DFN (5x6) |
