Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIA906EDJ-T1-GE3

SIA906EDJ-T1-GE3

For Reference Only

Part Number SIA906EDJ-T1-GE3
PNEDA Part # SIA906EDJ-T1-GE3
Description MOSFET 2N-CH 20V 4.5A SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 218,982
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA906EDJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA906EDJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIA906EDJ-T1-GE3, SIA906EDJ-T1-GE3 Datasheet (Total Pages: 9, Size: 295.12 KB)
PDFSIA906EDJ-T1-GE3 Datasheet Cover
SIA906EDJ-T1-GE3 Datasheet Page 2 SIA906EDJ-T1-GE3 Datasheet Page 3 SIA906EDJ-T1-GE3 Datasheet Page 4 SIA906EDJ-T1-GE3 Datasheet Page 5 SIA906EDJ-T1-GE3 Datasheet Page 6 SIA906EDJ-T1-GE3 Datasheet Page 7 SIA906EDJ-T1-GE3 Datasheet Page 8 SIA906EDJ-T1-GE3 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIA906EDJ-T1-GE3 Datasheet
  • where to find SIA906EDJ-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIA906EDJ-T1-GE3
  • SIA906EDJ-T1-GE3 PDF Datasheet
  • SIA906EDJ-T1-GE3 Stock

  • SIA906EDJ-T1-GE3 Pinout
  • Datasheet SIA906EDJ-T1-GE3
  • SIA906EDJ-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIA906EDJ-T1-GE3 Price
  • SIA906EDJ-T1-GE3 Distributor

SIA906EDJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.5A
Rds On (Max) @ Id, Vgs46mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds350pF @ 10V
Power - Max7.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual

The Products You May Be Interested In

BSO215C

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.7A

Rds On (Max) @ Id, Vgs

100mOhm @ 3.7A, 10V

Vgs(th) (Max) @ Id

2V @ 10µA

Gate Charge (Qg) (Max) @ Vgs

11.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

246pF @ 25V

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

NVMFD5C478NWFT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

9.8A (Ta), 27A (Tc)

Rds On (Max) @ Id, Vgs

17mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

3.5V @ 20µA

Gate Charge (Qg) (Max) @ Vgs

6.3nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

325pF @ 25V

Power - Max

3.1W (Ta), 23W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

8-DFN (5x6) Dual Flag (SO8FL-Dual)

FDS6898A_NF40

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

9.4A

Rds On (Max) @ Id, Vgs

14mOhm @ 9.4A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1821pF @ 10V

Power - Max

900mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC

SIA910EDJ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4.5A

Rds On (Max) @ Id, Vgs

28mOhm @ 5.2A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds

455pF @ 6V

Power - Max

7.8W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SC-70-6 Dual

Supplier Device Package

PowerPAK® SC-70-6 Dual

SSM6N7002BFE(T5L,F

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

200mA

Rds On (Max) @ Id, Vgs

2.1Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

3.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

17pF @ 25V

Power - Max

150mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

ES6 (1.6x1.6)

Recently Sold

74279221111

74279221111

Wurth Electronics

FERRITE BEAD 110 OHM 1206 1LN

ADUM1100ARZ

ADUM1100ARZ

Analog Devices

DGTL ISO 2.5KV GEN PURP 8SOIC

LTST-C295KGKRKT

LTST-C295KGKRKT

Lite-On Inc.

LED GREEN/RED CLEAR CHIP SMD

MC33161DMR2G

MC33161DMR2G

ON Semiconductor

IC MONITOR VOLTAGE UNIV 8MICRO

LPC2388FBD144,551

LPC2388FBD144,551

NXP

IC MCU 32BIT 512KB FLASH 144LQFP

MURS120-E3/52T

MURS120-E3/52T

Vishay Semiconductor Diodes Division

DIODE GP 200V 1A DO214AA

AD9515BCPZ

AD9515BCPZ

Analog Devices

IC CLK BUFFER 1:2 1.6GHZ 32LFCSP

BAT54-7-F

BAT54-7-F

Diodes Incorporated

DIODE SCHOTTKY 30V 200MA SOT23-3

SMCJ70CA-E3/57T

SMCJ70CA-E3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 70V 113V DO214AB

IRF7470PBF

IRF7470PBF

Infineon Technologies

MOSFET N-CH 40V 10A 8-SOIC

LTC6993IS6-1#TRMPBF

LTC6993IS6-1#TRMPBF

Linear Technology/Analog Devices

IC MONO MULTIVIBRATOR TSOT23-6

MAX253CSA+T

MAX253CSA+T

Maxim Integrated

IC DRVR TRANSFORMER 8-SOIC