Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIA911ADJ-T1-GE3

SIA911ADJ-T1-GE3

For Reference Only

Part Number SIA911ADJ-T1-GE3
PNEDA Part # SIA911ADJ-T1-GE3
Description MOSFET 2P-CH 20V 4.5A SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,824
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA911ADJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA911ADJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIA911ADJ-T1-GE3, SIA911ADJ-T1-GE3 Datasheet (Total Pages: 9, Size: 258.1 KB)
PDFSIA911ADJ-T1-GE3 Datasheet Cover
SIA911ADJ-T1-GE3 Datasheet Page 2 SIA911ADJ-T1-GE3 Datasheet Page 3 SIA911ADJ-T1-GE3 Datasheet Page 4 SIA911ADJ-T1-GE3 Datasheet Page 5 SIA911ADJ-T1-GE3 Datasheet Page 6 SIA911ADJ-T1-GE3 Datasheet Page 7 SIA911ADJ-T1-GE3 Datasheet Page 8 SIA911ADJ-T1-GE3 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIA911ADJ-T1-GE3 Datasheet
  • where to find SIA911ADJ-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIA911ADJ-T1-GE3
  • SIA911ADJ-T1-GE3 PDF Datasheet
  • SIA911ADJ-T1-GE3 Stock

  • SIA911ADJ-T1-GE3 Pinout
  • Datasheet SIA911ADJ-T1-GE3
  • SIA911ADJ-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIA911ADJ-T1-GE3 Price
  • SIA911ADJ-T1-GE3 Distributor

SIA911ADJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.5A
Rds On (Max) @ Id, Vgs116mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds345pF @ 10V
Power - Max6.5W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual

The Products You May Be Interested In

TC8020K6-G-M937

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

6 N and 6 P-Channel

FET Feature

Standard

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

8Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

2.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

Power - Max

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

56-VFQFN Exposed Pad

Supplier Device Package

56-QFN (8x8)

SH8M24GZETB

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N and P-Channel

FET Feature

Standard

Drain to Source Voltage (Vdss)

45V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Rds On (Max) @ Id, Vgs

46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

9.6nC, 18.2nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

550pF, 1700pF @ 10V

Power - Max

1.4W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOP

SH8KA2GZETB

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

-

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8A

Rds On (Max) @ Id, Vgs

28mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

330pF @ 15V

Power - Max

2.8W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOP

IRF7757TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.8A

Rds On (Max) @ Id, Vgs

35mOhm @ 4.8A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1340pF @ 15V

Power - Max

1.2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP

IRF6702M2DTR1PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

15A

Rds On (Max) @ Id, Vgs

6.6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1380pF @ 15V

Power - Max

2.7W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric MA

Supplier Device Package

DIRECTFET™ MA

Recently Sold

ESD9X5.0ST5G

ESD9X5.0ST5G

ON Semiconductor

TVS DIODE 5V 12.3V SOD923

ES1JFL

ES1JFL

ON Semiconductor

DIODE GEN PURP 600V 1A SOD123F

IRF9321TRPBF

IRF9321TRPBF

Infineon Technologies

MOSFET P-CH 30V 15A 8-SOIC

LT3010EMS8E#TRPBF

LT3010EMS8E#TRPBF

Linear Technology/Analog Devices

IC REG LINEAR POS ADJ 50MA 8MSOP

MIC2544A-1YMM

MIC2544A-1YMM

Microchip Technology

IC SW CURR LIMIT HI SIDE 8MSOP

FDC6331L

FDC6331L

ON Semiconductor

IC LOAD SWITCH INT 8VIN SSOT-6

SP3232ECN-L

SP3232ECN-L

MaxLinear, Inc.

IC TRANSCEIVER FULL 2/2 16SOIC

VMMK-1218-TR1G

VMMK-1218-TR1G

Broadcom

FET RF 5V 10GHZ 0402

MLX90614ESF-DCI-000-SP

MLX90614ESF-DCI-000-SP

Melexis Technologies NV

SENSOR DGTL -40C-85C TO39

CPH3225A

CPH3225A

Seiko Instruments

CAP 11MF 3.3V SURFACE MOUNT

MMBD4148

MMBD4148

ON Semiconductor

DIODE GEN PURP 100V 200MA SOT23

RL2010FK-070R43L

RL2010FK-070R43L

Yageo

RES 0.43 OHM 1% 3/4W 2010