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SIB404DK-T1-GE3

SIB404DK-T1-GE3

For Reference Only

Part Number SIB404DK-T1-GE3
PNEDA Part # SIB404DK-T1-GE3
Description MOSFET N-CH 12V 9A SC-75-6L
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,724
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 13 - May 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIB404DK-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIB404DK-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIB404DK-T1-GE3, SIB404DK-T1-GE3 Datasheet (Total Pages: 9, Size: 194.18 KB)
PDFSIB404DK-T1-GE3 Datasheet Cover
SIB404DK-T1-GE3 Datasheet Page 2 SIB404DK-T1-GE3 Datasheet Page 3 SIB404DK-T1-GE3 Datasheet Page 4 SIB404DK-T1-GE3 Datasheet Page 5 SIB404DK-T1-GE3 Datasheet Page 6 SIB404DK-T1-GE3 Datasheet Page 7 SIB404DK-T1-GE3 Datasheet Page 8 SIB404DK-T1-GE3 Datasheet Page 9

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SIB404DK-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V
Rds On (Max) @ Id, Vgs19mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
Vgs (Max)±5V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)2.5W (Ta), 13W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-75-6L Single
Package / CasePowerPAK® SC-75-6L

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