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SIB411DK-T1-E3

SIB411DK-T1-E3

For Reference Only

Part Number SIB411DK-T1-E3
PNEDA Part # SIB411DK-T1-E3
Description MOSFET P-CH 20V 9A SC75-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,508
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIB411DK-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIB411DK-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIB411DK-T1-E3, SIB411DK-T1-E3 Datasheet (Total Pages: 7, Size: 123.77 KB)
PDFSIB411DK-T1-GE3 Datasheet Cover
SIB411DK-T1-GE3 Datasheet Page 2 SIB411DK-T1-GE3 Datasheet Page 3 SIB411DK-T1-GE3 Datasheet Page 4 SIB411DK-T1-GE3 Datasheet Page 5 SIB411DK-T1-GE3 Datasheet Page 6 SIB411DK-T1-GE3 Datasheet Page 7

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SIB411DK-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs66mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds470pF @ 10V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 13W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-75-6L Single
Package / CasePowerPAK® SC-75-6L

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