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SIB441EDK-T1-GE3

SIB441EDK-T1-GE3

For Reference Only

Part Number SIB441EDK-T1-GE3
PNEDA Part # SIB441EDK-T1-GE3
Description MOSFET P-CH 12V 9A PPAK SC75-6L
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 154,686
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIB441EDK-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIB441EDK-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIB441EDK-T1-GE3, SIB441EDK-T1-GE3 Datasheet (Total Pages: 9, Size: 244.01 KB)
PDFSIB441EDK-T1-GE3 Datasheet Cover
SIB441EDK-T1-GE3 Datasheet Page 2 SIB441EDK-T1-GE3 Datasheet Page 3 SIB441EDK-T1-GE3 Datasheet Page 4 SIB441EDK-T1-GE3 Datasheet Page 5 SIB441EDK-T1-GE3 Datasheet Page 6 SIB441EDK-T1-GE3 Datasheet Page 7 SIB441EDK-T1-GE3 Datasheet Page 8 SIB441EDK-T1-GE3 Datasheet Page 9

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SIB441EDK-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs25.5mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs33nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1180pF @ 6V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 13W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-75-6L Single
Package / CasePowerPAK® SC-75-6L

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