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SIB911DK-T1-GE3

SIB911DK-T1-GE3

For Reference Only

Part Number SIB911DK-T1-GE3
PNEDA Part # SIB911DK-T1-GE3
Description MOSFET 2P-CH 20V 2.6A SC75-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,798
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIB911DK-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIB911DK-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIB911DK-T1-GE3, SIB911DK-T1-GE3 Datasheet (Total Pages: 7, Size: 137.28 KB)
PDFSIB911DK-T1-GE3 Datasheet Cover
SIB911DK-T1-GE3 Datasheet Page 2 SIB911DK-T1-GE3 Datasheet Page 3 SIB911DK-T1-GE3 Datasheet Page 4 SIB911DK-T1-GE3 Datasheet Page 5 SIB911DK-T1-GE3 Datasheet Page 6 SIB911DK-T1-GE3 Datasheet Page 7

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SIB911DK-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.6A
Rds On (Max) @ Id, Vgs295mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds115pF @ 10V
Power - Max3.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-75-6L Dual
Supplier Device PackagePowerPAK® SC-75-6L Dual

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