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SIDR610DP-T1-GE3

SIDR610DP-T1-GE3

For Reference Only

Part Number SIDR610DP-T1-GE3
PNEDA Part # SIDR610DP-T1-GE3
Description MOSFET N-CHAN 200V PPAK SO-8DC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 59,808
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIDR610DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIDR610DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIDR610DP-T1-GE3, SIDR610DP-T1-GE3 Datasheet (Total Pages: 9, Size: 225.87 KB)
PDFSIDR610DP-T1-GE3 Datasheet Cover
SIDR610DP-T1-GE3 Datasheet Page 2 SIDR610DP-T1-GE3 Datasheet Page 3 SIDR610DP-T1-GE3 Datasheet Page 4 SIDR610DP-T1-GE3 Datasheet Page 5 SIDR610DP-T1-GE3 Datasheet Page 6 SIDR610DP-T1-GE3 Datasheet Page 7 SIDR610DP-T1-GE3 Datasheet Page 8 SIDR610DP-T1-GE3 Datasheet Page 9

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SIDR610DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C8.9A (Ta), 39.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs31.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1380pF @ 100V
FET Feature-
Power Dissipation (Max)6.25W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8DC
Package / CasePowerPAK® SO-8

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