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SIE800DF-T1-E3

SIE800DF-T1-E3

For Reference Only

Part Number SIE800DF-T1-E3
PNEDA Part # SIE800DF-T1-E3
Description MOSFET N-CH 30V 50A 10-POLARPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,644
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIE800DF-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIE800DF-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIE800DF-T1-E3, SIE800DF-T1-E3 Datasheet (Total Pages: 7, Size: 111.99 KB)
PDFSIE800DF-T1-GE3 Datasheet Cover
SIE800DF-T1-GE3 Datasheet Page 2 SIE800DF-T1-GE3 Datasheet Page 3 SIE800DF-T1-GE3 Datasheet Page 4 SIE800DF-T1-GE3 Datasheet Page 5 SIE800DF-T1-GE3 Datasheet Page 6 SIE800DF-T1-GE3 Datasheet Page 7

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SIE800DF-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.2mOhm @ 11A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 15V
FET Feature-
Power Dissipation (Max)5.2W (Ta), 104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package10-PolarPAK® (S)
Package / Case10-PolarPAK® (S)

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