SIE810DF-T1-E3
For Reference Only
| Part Number | SIE810DF-T1-E3 |
| PNEDA Part # | SIE810DF-T1-E3 |
| Description | MOSFET N-CH 20V 60A 10-POLARPAK |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 5,832 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 3 - May 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SIE810DF-T1-E3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SIE810DF-T1-E3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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SIE810DF-T1-E3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 10-PolarPAK® (L) |
| Package / Case | 10-PolarPAK® (L) |
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Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 57A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.1mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs 16.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 894pF @ 15V FET Feature - Power Dissipation (Max) 52W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK56, Power-SO8 Package / Case SC-100, SOT-669 |
