Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIHA12N60E-E3

SIHA12N60E-E3

For Reference Only

Part Number SIHA12N60E-E3
PNEDA Part # SIHA12N60E-E3
Description MOSFET N-CH 600V 12A TO-220
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,922
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHA12N60E-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHA12N60E-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHA12N60E-E3, SIHA12N60E-E3 Datasheet (Total Pages: 8, Size: 171.65 KB)
PDFSIHA12N60E-E3 Datasheet Cover
SIHA12N60E-E3 Datasheet Page 2 SIHA12N60E-E3 Datasheet Page 3 SIHA12N60E-E3 Datasheet Page 4 SIHA12N60E-E3 Datasheet Page 5 SIHA12N60E-E3 Datasheet Page 6 SIHA12N60E-E3 Datasheet Page 7 SIHA12N60E-E3 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIHA12N60E-E3 Datasheet
  • where to find SIHA12N60E-E3
  • Vishay Siliconix

  • Vishay Siliconix SIHA12N60E-E3
  • SIHA12N60E-E3 PDF Datasheet
  • SIHA12N60E-E3 Stock

  • SIHA12N60E-E3 Pinout
  • Datasheet SIHA12N60E-E3
  • SIHA12N60E-E3 Supplier

  • Vishay Siliconix Distributor
  • SIHA12N60E-E3 Price
  • SIHA12N60E-E3 Distributor

SIHA12N60E-E3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs58nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds937pF @ 100V
FET Feature-
Power Dissipation (Max)33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220 Full Pack
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

Manufacturer

IXYS

Series

PolarHT™ HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

150A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

190nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5800pF @ 25V

FET Feature

-

Power Dissipation (Max)

714W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264AA (IXFK)

Package / Case

TO-264-3, TO-264AA

BSC106N025S G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

13A (Ta), 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10.6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1370pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta), 43W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-1

Package / Case

8-PowerTDFN

NX7002BKMBYL

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

350mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

2.8Ohm @ 200mA, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

23.6pF @ 10V

FET Feature

-

Power Dissipation (Max)

350mW (Ta), 3.1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DFN1006B-3

Package / Case

3-XFDFN

SIB417AEDK-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

8V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

32mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18.5nC @ 5V

Vgs (Max)

±5V

Input Capacitance (Ciss) (Max) @ Vds

878pF @ 4V

FET Feature

-

Power Dissipation (Max)

2.4W (Ta), 13W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-75-6L Single

Package / Case

PowerPAK® SC-75-6L

DMP2305U-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

60mOhm @ 4.2A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.6nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

727pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.4W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

Recently Sold

ADV7123KSTZ140

ADV7123KSTZ140

Analog Devices

IC DAC 10BIT A-OUT 48LQFP

MX25L25645GMI-10G

MX25L25645GMI-10G

Macronix

IC FLASH 256MBIT

HCPL-7710-000E

HCPL-7710-000E

Broadcom

OPTOISO 3.75KV PUSH PULL 8DIP

16SVPF180M

16SVPF180M

Panasonic Electronic Components

CAP ALUM POLY 180UF 20% 16V SMD

2N6433

2N6433

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

IPS5451S

IPS5451S

Infineon Technologies

IC MOSFET HS PWR SW 35A D2PAK

LBM2016T330J

LBM2016T330J

Taiyo Yuden

FIXED IND 33UH 125MA 3.6 OHM SMD

74HC4066D

74HC4066D

Toshiba Semiconductor and Storage

IC SWITCH QUAD 14SOIC

LTC4364HS-2#PBF

LTC4364HS-2#PBF

Linear Technology/Analog Devices

IC SURGE STOPPER W/DIODE SMD

TVS4201MR6T1G

TVS4201MR6T1G

ON Semiconductor

TVS DIODE 5V 12V 6TSOP

LTM4613IV#PBF

LTM4613IV#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 12V 8A

MIC2025-1YM

MIC2025-1YM

Microchip Technology

IC SW DISTRIBUTION 1CHAN 8SOIC