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SIHA180N60E-GE3

SIHA180N60E-GE3

For Reference Only

Part Number SIHA180N60E-GE3
PNEDA Part # SIHA180N60E-GE3
Description MOSFET N-CH TO-220 FULLPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 14,262
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHA180N60E-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHA180N60E-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHA180N60E-GE3, SIHA180N60E-GE3 Datasheet (Total Pages: 8, Size: 151.08 KB)
PDFSIHA180N60E-GE3 Datasheet Cover
SIHA180N60E-GE3 Datasheet Page 2 SIHA180N60E-GE3 Datasheet Page 3 SIHA180N60E-GE3 Datasheet Page 4 SIHA180N60E-GE3 Datasheet Page 5 SIHA180N60E-GE3 Datasheet Page 6 SIHA180N60E-GE3 Datasheet Page 7 SIHA180N60E-GE3 Datasheet Page 8

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SIHA180N60E-GE3 Specifications

ManufacturerVishay Siliconix
SeriesE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1085pF @ 100V
FET Feature-
Power Dissipation (Max)33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220 Full Pack
Package / CaseTO-220-3 Full Pack

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