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SIHA25N50E-E3

SIHA25N50E-E3

For Reference Only

Part Number SIHA25N50E-E3
PNEDA Part # SIHA25N50E-E3
Description MOSFET N-CH 500V 26A TO-220FP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 20,664
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHA25N50E-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHA25N50E-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHA25N50E-E3, SIHA25N50E-E3 Datasheet (Total Pages: 8, Size: 157.77 KB)
PDFSIHA25N50E-E3 Datasheet Cover
SIHA25N50E-E3 Datasheet Page 2 SIHA25N50E-E3 Datasheet Page 3 SIHA25N50E-E3 Datasheet Page 4 SIHA25N50E-E3 Datasheet Page 5 SIHA25N50E-E3 Datasheet Page 6 SIHA25N50E-E3 Datasheet Page 7 SIHA25N50E-E3 Datasheet Page 8

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SIHA25N50E-E3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs145mOhm @ 12A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs86nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1980pF @ 100V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220 Full Pack
Package / CaseTO-220-3 Full Pack

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