Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIHB100N60E-GE3

SIHB100N60E-GE3

For Reference Only

Part Number SIHB100N60E-GE3
PNEDA Part # SIHB100N60E-GE3
Description MOSFET E SERIES 600V D2PAK (TO-2
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 23,640
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHB100N60E-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHB100N60E-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHB100N60E-GE3, SIHB100N60E-GE3 Datasheet (Total Pages: 10, Size: 192.56 KB)
PDFSIHB100N60E-GE3 Datasheet Cover
SIHB100N60E-GE3 Datasheet Page 2 SIHB100N60E-GE3 Datasheet Page 3 SIHB100N60E-GE3 Datasheet Page 4 SIHB100N60E-GE3 Datasheet Page 5 SIHB100N60E-GE3 Datasheet Page 6 SIHB100N60E-GE3 Datasheet Page 7 SIHB100N60E-GE3 Datasheet Page 8 SIHB100N60E-GE3 Datasheet Page 9 SIHB100N60E-GE3 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIHB100N60E-GE3 Datasheet
  • where to find SIHB100N60E-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIHB100N60E-GE3
  • SIHB100N60E-GE3 PDF Datasheet
  • SIHB100N60E-GE3 Stock

  • SIHB100N60E-GE3 Pinout
  • Datasheet SIHB100N60E-GE3
  • SIHB100N60E-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIHB100N60E-GE3 Price
  • SIHB100N60E-GE3 Distributor

SIHB100N60E-GE3 Specifications

ManufacturerVishay Siliconix
SeriesE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs100mOhm @ 13A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1851pF @ 100V
FET Feature-
Power Dissipation (Max)208W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

BSS806NEH6327XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 2.5V

Rds On (Max) @ Id, Vgs

57mOhm @ 2.3A, 2.5V

Vgs(th) (Max) @ Id

0.75V @ 11µA

Gate Charge (Qg) (Max) @ Vgs

1.7nC @ 2.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

529pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

BSC120N03LSGATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Ta), 39A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 28W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-5

Package / Case

8-PowerTDFN

SIR826DP-T1-RE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

90nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2900pF @ 40V

FET Feature

-

Power Dissipation (Max)

104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

2SK3547G0L

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

100mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4V

Rds On (Max) @ Id, Vgs

12Ohm @ 10mA, 4V

Vgs(th) (Max) @ Id

1.5V @ 1µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±7V

Input Capacitance (Ciss) (Max) @ Vds

12pF @ 3V

FET Feature

-

Power Dissipation (Max)

100mW (Ta)

Operating Temperature

125°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SSSMini3-F2

Package / Case

SOT-723

IXFK80N15Q

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

22.5mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

180nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4500pF @ 25V

FET Feature

-

Power Dissipation (Max)

360W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264AA (IXFK)

Package / Case

TO-264-3, TO-264AA

Recently Sold

H22A4

H22A4

ON Semiconductor

SENSOR OPT SLOT PHOTOTRAN PC PIN

MX25L12835FM2I-10G

MX25L12835FM2I-10G

Macronix

IC FLASH 128M SPI 104MHZ 8SOP

74F175SCX

74F175SCX

ON Semiconductor

IC FF D-TYPE SNGL 4BIT 16SOIC

AT49F040-12TI

AT49F040-12TI

Microchip Technology

IC FLASH 4M PARALLEL 32TSOP

ATMEGA48PA-AU

ATMEGA48PA-AU

Microchip Technology

IC MCU 8BIT 4KB FLASH 32TQFP

SZNUP2105LT1G

SZNUP2105LT1G

ON Semiconductor

TVS DIODE 24V 44V SOT23-3

LPS0800H1000JB

LPS0800H1000JB

Vishay Sfernice

RES CHAS MNT 100 OHM 5% 800W

ADM2481BRWZ

ADM2481BRWZ

Analog Devices

DGTL ISO RS422/RS485 16SOIC

SMF6.0A

SMF6.0A

Littelfuse

TVS DIODE 6V 10.3V SOD123F

ADT7411ARQZ-REEL

ADT7411ARQZ-REEL

Analog Devices

SENSOR DIGITAL -40C-120C 16QSOP

ERJ-M1WSF20MU

ERJ-M1WSF20MU

Panasonic Electronic Components

RES 0.02 OHM 1% 1W 2512

MP24833GN-Z

MP24833GN-Z

Monolithic Power Systems Inc.

IC LED DRIVER