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SIHB12N50E-GE3

SIHB12N50E-GE3

For Reference Only

Part Number SIHB12N50E-GE3
PNEDA Part # SIHB12N50E-GE3
Description MOSFET N-CH 500V 10.5A TO-263
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,094
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHB12N50E-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHB12N50E-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHB12N50E-GE3, SIHB12N50E-GE3 Datasheet (Total Pages: 9, Size: 204.6 KB)
PDFSIHB12N50E-GE3 Datasheet Cover
SIHB12N50E-GE3 Datasheet Page 2 SIHB12N50E-GE3 Datasheet Page 3 SIHB12N50E-GE3 Datasheet Page 4 SIHB12N50E-GE3 Datasheet Page 5 SIHB12N50E-GE3 Datasheet Page 6 SIHB12N50E-GE3 Datasheet Page 7 SIHB12N50E-GE3 Datasheet Page 8 SIHB12N50E-GE3 Datasheet Page 9

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SIHB12N50E-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds886pF @ 100V
FET Feature-
Power Dissipation (Max)114W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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