SIHB12N65E-GE3
For Reference Only
| Part Number | SIHB12N65E-GE3 |
| PNEDA Part # | SIHB12N65E-GE3 |
| Description | MOSFET N-CH 650V 12A D2PAK |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 22,950 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 13 - May 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SIHB12N65E-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SIHB12N65E-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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SIHB12N65E-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1224pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 6.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 745mOhm @ 3.25A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 440pF @ 50V FET Feature - Power Dissipation (Max) 84W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
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