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SIHB12N65E-GE3

SIHB12N65E-GE3

For Reference Only

Part Number SIHB12N65E-GE3
PNEDA Part # SIHB12N65E-GE3
Description MOSFET N-CH 650V 12A D2PAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 22,950
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHB12N65E-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHB12N65E-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHB12N65E-GE3, SIHB12N65E-GE3 Datasheet (Total Pages: 1, Size: 112.87 KB)
PDFSIHB12N65E-GE3 Datasheet Cover

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SIHB12N65E-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1224pF @ 100V
FET Feature-
Power Dissipation (Max)156W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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