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SIHB22N60ET1-GE3

SIHB22N60ET1-GE3

For Reference Only

Part Number SIHB22N60ET1-GE3
PNEDA Part # SIHB22N60ET1-GE3
Description MOSFET N-CH 600V 21A TO263
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,832
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHB22N60ET1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHB22N60ET1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHB22N60ET1-GE3, SIHB22N60ET1-GE3 Datasheet (Total Pages: 9, Size: 215.65 KB)
PDFSIHB22N60ET5-GE3 Datasheet Cover
SIHB22N60ET5-GE3 Datasheet Page 2 SIHB22N60ET5-GE3 Datasheet Page 3 SIHB22N60ET5-GE3 Datasheet Page 4 SIHB22N60ET5-GE3 Datasheet Page 5 SIHB22N60ET5-GE3 Datasheet Page 6 SIHB22N60ET5-GE3 Datasheet Page 7 SIHB22N60ET5-GE3 Datasheet Page 8 SIHB22N60ET5-GE3 Datasheet Page 9

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SIHB22N60ET1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs86nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1920pF @ 100V
FET Feature-
Power Dissipation (Max)227W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D²Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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