Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIHB22N60S-GE3

SIHB22N60S-GE3

For Reference Only

Part Number SIHB22N60S-GE3
PNEDA Part # SIHB22N60S-GE3
Description MOSFET N-CH 650V TO263
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,878
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHB22N60S-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHB22N60S-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHB22N60S-GE3, SIHB22N60S-GE3 Datasheet (Total Pages: 7, Size: 155.41 KB)
PDFSIHB22N60S-GE3 Datasheet Cover
SIHB22N60S-GE3 Datasheet Page 2 SIHB22N60S-GE3 Datasheet Page 3 SIHB22N60S-GE3 Datasheet Page 4 SIHB22N60S-GE3 Datasheet Page 5 SIHB22N60S-GE3 Datasheet Page 6 SIHB22N60S-GE3 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIHB22N60S-GE3 Datasheet
  • where to find SIHB22N60S-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIHB22N60S-GE3
  • SIHB22N60S-GE3 PDF Datasheet
  • SIHB22N60S-GE3 Stock

  • SIHB22N60S-GE3 Pinout
  • Datasheet SIHB22N60S-GE3
  • SIHB22N60S-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIHB22N60S-GE3 Price
  • SIHB22N60S-GE3 Distributor

SIHB22N60S-GE3 Specifications

ManufacturerVishay Siliconix
SeriesS
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 11A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2.81nF @ 25V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

DMPH4023SK3Q-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

26mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1091pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FDMC7672

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®, SyncFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

16.9A (Ta), 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.7mOhm @ 16.9A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

57nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3890pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.3W (Ta), 33W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-MLP (3.3x3.3)

Package / Case

8-PowerWDFN

AOTF10N60

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3F

Package / Case

TO-220-3 Full Pack

IXTH76N25T

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

76A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

39mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

92nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4500pF @ 25V

FET Feature

-

Power Dissipation (Max)

460W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

IXFT52N30Q

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

52A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

60mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5300pF @ 25V

FET Feature

-

Power Dissipation (Max)

360W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Recently Sold

WSL20108L000FEA

WSL20108L000FEA

Vishay Dale

RES 0.008 OHM 1% 1/2W 2010

MBRD1035CTLG

MBRD1035CTLG

ON Semiconductor

DIODE ARRAY SCHOTTKY 35V 5A DPAK

PKGS-00LDP1-R

PKGS-00LDP1-R

Murata Electronics

SENSOR SHOCK 50G PIEZO FILM

219-2MSTR

219-2MSTR

CTS Electrocomponents

SWITCH SLIDE DIP SPST 100MA 20V

MBRD10200CT

MBRD10200CT

Littelfuse

DIODE SCHOTTKY 200V 5A TO252

IR2151

IR2151

Infineon Technologies

IC DRVR HALF BRDG SELF-OSC 8-DIP

AD9765ASTZ

AD9765ASTZ

Analog Devices

IC DAC 12BIT A-OUT 48LQFP

3314G-1-103E

3314G-1-103E

Bourns

TRIMMER 10K OHM 0.25W GW TOP ADJ

MAX1619MEE+T

MAX1619MEE+T

Maxim Integrated

SENSOR DIGITAL -55C-125C 16QSOP

LT1965EDD#PBF

LT1965EDD#PBF

Linear Technology/Analog Devices

IC REG LINEAR POS ADJ 1.1A 8DFN

ASDXRRX005NDAA5

ASDXRRX005NDAA5

Honeywell Sensing and Productivity Solutions

SENSOR PRESSURE DIFF 5"" H2O 8DIP

BYV26C-TAP

BYV26C-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1A SOD57