SIHD1K4N60E-GE3
For Reference Only
| Part Number | SIHD1K4N60E-GE3 |
| PNEDA Part # | SIHD1K4N60E-GE3 |
| Description | MOSFET N-CH DPAK TO-252 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 27,330 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 27 - Jul 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SIHD1K4N60E-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SIHD1K4N60E-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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SIHD1K4N60E-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | E |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.45Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 172pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 22.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 120mOhm @ 12A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 62.5nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 100V FET Feature - Power Dissipation (Max) 2.8W (Ta), 150W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerFlat™ (8x8) HV Package / Case 8-PowerVDFN |
