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SIHF18N50C-E3

SIHF18N50C-E3

For Reference Only

Part Number SIHF18N50C-E3
PNEDA Part # SIHF18N50C-E3
Description MOSFET N-CH 500V 18A TO220
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,986
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 10 - May 15 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHF18N50C-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHF18N50C-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHF18N50C-E3, SIHF18N50C-E3 Datasheet (Total Pages: 8, Size: 168.84 KB)
PDFSIHF18N50C-E3 Datasheet Cover
SIHF18N50C-E3 Datasheet Page 2 SIHF18N50C-E3 Datasheet Page 3 SIHF18N50C-E3 Datasheet Page 4 SIHF18N50C-E3 Datasheet Page 5 SIHF18N50C-E3 Datasheet Page 6 SIHF18N50C-E3 Datasheet Page 7 SIHF18N50C-E3 Datasheet Page 8

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SIHF18N50C-E3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs270mOhm @ 10A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs76nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2942pF @ 25V
FET Feature-
Power Dissipation (Max)38W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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