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SIHF28N60EF-GE3

SIHF28N60EF-GE3

For Reference Only

Part Number SIHF28N60EF-GE3
PNEDA Part # SIHF28N60EF-GE3
Description MOSFET N-CH 600V 28A FULLPAK220
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 19,164
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHF28N60EF-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHF28N60EF-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHF28N60EF-GE3, SIHF28N60EF-GE3 Datasheet (Total Pages: 8, Size: 167.18 KB)
PDFSIHF28N60EF-GE3 Datasheet Cover
SIHF28N60EF-GE3 Datasheet Page 2 SIHF28N60EF-GE3 Datasheet Page 3 SIHF28N60EF-GE3 Datasheet Page 4 SIHF28N60EF-GE3 Datasheet Page 5 SIHF28N60EF-GE3 Datasheet Page 6 SIHF28N60EF-GE3 Datasheet Page 7 SIHF28N60EF-GE3 Datasheet Page 8

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SIHF28N60EF-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs123mOhm @ 14A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2714pF @ 100V
FET Feature-
Power Dissipation (Max)39W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220 Full Pack
Package / CaseTO-220-3 Full Pack

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