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SIHF35N60E-GE3

SIHF35N60E-GE3

For Reference Only

Part Number SIHF35N60E-GE3
PNEDA Part # SIHF35N60E-GE3
Description MOSFET N-CHANNEL 600V 32A TO220
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 16,560
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHF35N60E-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHF35N60E-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHF35N60E-GE3, SIHF35N60E-GE3 Datasheet (Total Pages: 7, Size: 146.36 KB)
PDFSIHF35N60E-GE3 Datasheet Cover
SIHF35N60E-GE3 Datasheet Page 2 SIHF35N60E-GE3 Datasheet Page 3 SIHF35N60E-GE3 Datasheet Page 4 SIHF35N60E-GE3 Datasheet Page 5 SIHF35N60E-GE3 Datasheet Page 6 SIHF35N60E-GE3 Datasheet Page 7

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SIHF35N60E-GE3 Specifications

ManufacturerVishay Siliconix
SeriesE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs94mOhm @ 17A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs132nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2760pF @ 100V
FET Feature-
Power Dissipation (Max)39W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220 Full Pack
Package / CaseTO-220-3 Full Pack

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