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SIHG16N50C-E3

SIHG16N50C-E3

For Reference Only

Part Number SIHG16N50C-E3
PNEDA Part # SIHG16N50C-E3
Description MOSFET N-CH 500V 16A TO-247AC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,916
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHG16N50C-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHG16N50C-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHG16N50C-E3, SIHG16N50C-E3 Datasheet (Total Pages: 7, Size: 144.42 KB)
PDFSIHG16N50C-E3 Datasheet Cover
SIHG16N50C-E3 Datasheet Page 2 SIHG16N50C-E3 Datasheet Page 3 SIHG16N50C-E3 Datasheet Page 4 SIHG16N50C-E3 Datasheet Page 5 SIHG16N50C-E3 Datasheet Page 6 SIHG16N50C-E3 Datasheet Page 7

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SIHG16N50C-E3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 8A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs68nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1900pF @ 25V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AC
Package / CaseTO-247-3

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