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SIHH11N60E-T1-GE3

SIHH11N60E-T1-GE3

For Reference Only

Part Number SIHH11N60E-T1-GE3
PNEDA Part # SIHH11N60E-T1-GE3
Description MOSFET N-CH 600V 11A POWERPAK8X8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,220
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHH11N60E-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHH11N60E-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHH11N60E-T1-GE3, SIHH11N60E-T1-GE3 Datasheet (Total Pages: 9, Size: 192 KB)
PDFSIHH11N60E-T1-GE3 Datasheet Cover
SIHH11N60E-T1-GE3 Datasheet Page 2 SIHH11N60E-T1-GE3 Datasheet Page 3 SIHH11N60E-T1-GE3 Datasheet Page 4 SIHH11N60E-T1-GE3 Datasheet Page 5 SIHH11N60E-T1-GE3 Datasheet Page 6 SIHH11N60E-T1-GE3 Datasheet Page 7 SIHH11N60E-T1-GE3 Datasheet Page 8 SIHH11N60E-T1-GE3 Datasheet Page 9

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SIHH11N60E-T1-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs339mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs62nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1076pF @ 100V
FET Feature-
Power Dissipation (Max)114W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 8 x 8
Package / Case8-PowerTDFN

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