Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIHH27N60EF-T1-GE3

SIHH27N60EF-T1-GE3

For Reference Only

Part Number SIHH27N60EF-T1-GE3
PNEDA Part # SIHH27N60EF-T1-GE3
Description MOSFET N-CH 600V 29A POWERPAK8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,276
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHH27N60EF-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHH27N60EF-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHH27N60EF-T1-GE3, SIHH27N60EF-T1-GE3 Datasheet (Total Pages: 10, Size: 182.32 KB)
PDFSIHH27N60EF-T1-GE3 Datasheet Cover
SIHH27N60EF-T1-GE3 Datasheet Page 2 SIHH27N60EF-T1-GE3 Datasheet Page 3 SIHH27N60EF-T1-GE3 Datasheet Page 4 SIHH27N60EF-T1-GE3 Datasheet Page 5 SIHH27N60EF-T1-GE3 Datasheet Page 6 SIHH27N60EF-T1-GE3 Datasheet Page 7 SIHH27N60EF-T1-GE3 Datasheet Page 8 SIHH27N60EF-T1-GE3 Datasheet Page 9 SIHH27N60EF-T1-GE3 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIHH27N60EF-T1-GE3 Datasheet
  • where to find SIHH27N60EF-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIHH27N60EF-T1-GE3
  • SIHH27N60EF-T1-GE3 PDF Datasheet
  • SIHH27N60EF-T1-GE3 Stock

  • SIHH27N60EF-T1-GE3 Pinout
  • Datasheet SIHH27N60EF-T1-GE3
  • SIHH27N60EF-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIHH27N60EF-T1-GE3 Price
  • SIHH27N60EF-T1-GE3 Distributor

SIHH27N60EF-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs100mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs135nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2609pF @ 100V
FET Feature-
Power Dissipation (Max)202W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 8 x 8
Package / Case8-PowerTDFN

The Products You May Be Interested In

2N6660

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

410mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

3Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 24V

FET Feature

-

Power Dissipation (Max)

6.25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-39

Package / Case

TO-205AD, TO-39-3 Metal Can

NTMS10P02R2

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

8.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

14mOhm @ 10A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

3640pF @ 16V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

MCMG66-TP

Micro Commercial Co

Manufacturer

Micro Commercial Co

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

16V

Current - Continuous Drain (Id) @ 25°C

5.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

45mOhm @ 4.1A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.8nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

740pF @ 4V

FET Feature

-

Power Dissipation (Max)

1.7W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DFN2020-6G

Package / Case

6-WDFN Exposed Pad

DMN2024UFDF-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

7.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

22mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.9nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

647pF @ 10V

FET Feature

-

Power Dissipation (Max)

960mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

U-DFN2020-6

Package / Case

6-UDFN Exposed Pad

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

Recently Sold

A42MX16-FPLG84

A42MX16-FPLG84

Microsemi

IC FPGA 72 I/O 84PLCC

MT29F4G08ABADAH4-IT:D

MT29F4G08ABADAH4-IT:D

Micron Technology Inc.

IC FLASH 4G PARALLEL 63VFBGA

BC846B

BC846B

ON Semiconductor

TRANS NPN 65V 0.1A SOT-23

AT24C256C-SSHL-T

AT24C256C-SSHL-T

Microchip Technology

IC EEPROM 256K I2C 1MHZ 8SOIC

MX29GL512FLT2I-10Q

MX29GL512FLT2I-10Q

Macronix

IC FLASH 512M PARALLEL 56TSOP

WSL20108L000FEA

WSL20108L000FEA

Vishay Dale

RES 0.008 OHM 1% 1/2W 2010

NUC2401MNTAG

NUC2401MNTAG

ON Semiconductor

CMC 100MA 2LN 90 OHM SMD

MAX16808AUI+

MAX16808AUI+

Maxim Integrated

IC LED DRVR WT/RGB BCKLT 28TSSOP

WSL12062L000FEA

WSL12062L000FEA

Vishay Dale

RES 0.002 OHM 1% 1/4W 1206

NC7WZ132K8X

NC7WZ132K8X

ON Semiconductor

IC GATE NAND SCHMITT 2CH US8

2920L330/24MR

2920L330/24MR

Littelfuse

PTC RESET FUSE 24V 3.3A 2920

FP1107R1-R51-R

FP1107R1-R51-R

Eaton - Electronics Division

FIXED IND 510NH 55A 0.29 MOHM