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SIHJ10N60E-T1-GE3

SIHJ10N60E-T1-GE3

For Reference Only

Part Number SIHJ10N60E-T1-GE3
PNEDA Part # SIHJ10N60E-T1-GE3
Description MOSFET N-CH 600V 10A POWERPAKSO
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 16,638
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHJ10N60E-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHJ10N60E-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHJ10N60E-T1-GE3, SIHJ10N60E-T1-GE3 Datasheet (Total Pages: 9, Size: 182.44 KB)
PDFSIHJ10N60E-T1-GE3 Datasheet Cover
SIHJ10N60E-T1-GE3 Datasheet Page 2 SIHJ10N60E-T1-GE3 Datasheet Page 3 SIHJ10N60E-T1-GE3 Datasheet Page 4 SIHJ10N60E-T1-GE3 Datasheet Page 5 SIHJ10N60E-T1-GE3 Datasheet Page 6 SIHJ10N60E-T1-GE3 Datasheet Page 7 SIHJ10N60E-T1-GE3 Datasheet Page 8 SIHJ10N60E-T1-GE3 Datasheet Page 9

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SIHJ10N60E-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 5A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds784pF @ 100V
FET Feature-
Power Dissipation (Max)89W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / Case8-PowerTDFN

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