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SIHJ6N65E-T1-GE3

SIHJ6N65E-T1-GE3

For Reference Only

Part Number SIHJ6N65E-T1-GE3
PNEDA Part # SIHJ6N65E-T1-GE3
Description MOSFET N-CH 650V POWERPAK SO-8L
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 21,810
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHJ6N65E-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHJ6N65E-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHJ6N65E-T1-GE3, SIHJ6N65E-T1-GE3 Datasheet (Total Pages: 11, Size: 211.38 KB)
PDFSIHJ6N65E-T1-GE3 Datasheet Cover
SIHJ6N65E-T1-GE3 Datasheet Page 2 SIHJ6N65E-T1-GE3 Datasheet Page 3 SIHJ6N65E-T1-GE3 Datasheet Page 4 SIHJ6N65E-T1-GE3 Datasheet Page 5 SIHJ6N65E-T1-GE3 Datasheet Page 6 SIHJ6N65E-T1-GE3 Datasheet Page 7 SIHJ6N65E-T1-GE3 Datasheet Page 8 SIHJ6N65E-T1-GE3 Datasheet Page 9 SIHJ6N65E-T1-GE3 Datasheet Page 10 SIHJ6N65E-T1-GE3 Datasheet Page 11

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SIHJ6N65E-T1-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs868mOhm @ 3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds596pF @ 100V
FET Feature-
Power Dissipation (Max)74W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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