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SIHP22N60AE-GE3

SIHP22N60AE-GE3

For Reference Only

Part Number SIHP22N60AE-GE3
PNEDA Part # SIHP22N60AE-GE3
Description MOSFET N-CH 600V 20A TO220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 15,540
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHP22N60AE-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHP22N60AE-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHP22N60AE-GE3, SIHP22N60AE-GE3 Datasheet (Total Pages: 7, Size: 130.06 KB)
PDFSIHP22N60AE-GE3 Datasheet Cover
SIHP22N60AE-GE3 Datasheet Page 2 SIHP22N60AE-GE3 Datasheet Page 3 SIHP22N60AE-GE3 Datasheet Page 4 SIHP22N60AE-GE3 Datasheet Page 5 SIHP22N60AE-GE3 Datasheet Page 6 SIHP22N60AE-GE3 Datasheet Page 7

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SIHP22N60AE-GE3 Specifications

ManufacturerVishay Siliconix
SeriesE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs96nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1451pF @ 100V
FET Feature-
Power Dissipation (Max)179W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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