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SIHP33N60E-GE3

SIHP33N60E-GE3

For Reference Only

Part Number SIHP33N60E-GE3
PNEDA Part # SIHP33N60E-GE3
Description MOSFET N-CH 600V 33A TO-220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 16,518
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHP33N60E-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHP33N60E-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHP33N60E-GE3, SIHP33N60E-GE3 Datasheet (Total Pages: 8, Size: 299.43 KB)
PDFSIHP33N60E-GE3 Datasheet Cover
SIHP33N60E-GE3 Datasheet Page 2 SIHP33N60E-GE3 Datasheet Page 3 SIHP33N60E-GE3 Datasheet Page 4 SIHP33N60E-GE3 Datasheet Page 5 SIHP33N60E-GE3 Datasheet Page 6 SIHP33N60E-GE3 Datasheet Page 7 SIHP33N60E-GE3 Datasheet Page 8

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SIHP33N60E-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs99mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3508pF @ 100V
FET Feature-
Power Dissipation (Max)278W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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