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SIHP35N60EF-GE3

SIHP35N60EF-GE3

For Reference Only

Part Number SIHP35N60EF-GE3
PNEDA Part # SIHP35N60EF-GE3
Description MOSFET N-CH TO-220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 12,006
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHP35N60EF-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHP35N60EF-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHP35N60EF-GE3, SIHP35N60EF-GE3 Datasheet (Total Pages: 9, Size: 262.42 KB)
PDFSIHP35N60EF-GE3 Datasheet Cover
SIHP35N60EF-GE3 Datasheet Page 2 SIHP35N60EF-GE3 Datasheet Page 3 SIHP35N60EF-GE3 Datasheet Page 4 SIHP35N60EF-GE3 Datasheet Page 5 SIHP35N60EF-GE3 Datasheet Page 6 SIHP35N60EF-GE3 Datasheet Page 7 SIHP35N60EF-GE3 Datasheet Page 8 SIHP35N60EF-GE3 Datasheet Page 9

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SIHP35N60EF-GE3 Specifications

ManufacturerVishay Siliconix
SeriesEF
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs97mOhm @ 17A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs134nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2568pF @ 100V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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