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SIHP6N80E-GE3

SIHP6N80E-GE3

For Reference Only

Part Number SIHP6N80E-GE3
PNEDA Part # SIHP6N80E-GE3
Description MOSFET N-CHAN 800V TO-220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 21,348
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHP6N80E-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHP6N80E-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHP6N80E-GE3, SIHP6N80E-GE3 Datasheet (Total Pages: 7, Size: 127.3 KB)
PDFSIHP6N80E-GE3 Datasheet Cover
SIHP6N80E-GE3 Datasheet Page 2 SIHP6N80E-GE3 Datasheet Page 3 SIHP6N80E-GE3 Datasheet Page 4 SIHP6N80E-GE3 Datasheet Page 5 SIHP6N80E-GE3 Datasheet Page 6 SIHP6N80E-GE3 Datasheet Page 7

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SIHP6N80E-GE3 Specifications

ManufacturerVishay Siliconix
SeriesE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs940mOhm @ 3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds827pF @ 100V
FET Feature-
Power Dissipation (Max)78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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