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SIHP7N60E-E3

SIHP7N60E-E3

For Reference Only

Part Number SIHP7N60E-E3
PNEDA Part # SIHP7N60E-E3
Description MOSFET N-CH 600V 7A TO-220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,608
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHP7N60E-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHP7N60E-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHP7N60E-E3, SIHP7N60E-E3 Datasheet (Total Pages: 8, Size: 291.35 KB)
PDFSIHP7N60E-E3 Datasheet Cover
SIHP7N60E-E3 Datasheet Page 2 SIHP7N60E-E3 Datasheet Page 3 SIHP7N60E-E3 Datasheet Page 4 SIHP7N60E-E3 Datasheet Page 5 SIHP7N60E-E3 Datasheet Page 6 SIHP7N60E-E3 Datasheet Page 7 SIHP7N60E-E3 Datasheet Page 8

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SIHP7N60E-E3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds680pF @ 100V
FET Feature-
Power Dissipation (Max)78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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