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SIHU5N50D-GE3

SIHU5N50D-GE3

For Reference Only

Part Number SIHU5N50D-GE3
PNEDA Part # SIHU5N50D-GE3
Description MOSFET N-CH 500V 5.3A TO251 IPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 24,330
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHU5N50D-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHU5N50D-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHU5N50D-GE3, SIHU5N50D-GE3 Datasheet (Total Pages: 8, Size: 182 KB)
PDFSIHU5N50D-E3 Datasheet Cover
SIHU5N50D-E3 Datasheet Page 2 SIHU5N50D-E3 Datasheet Page 3 SIHU5N50D-E3 Datasheet Page 4 SIHU5N50D-E3 Datasheet Page 5 SIHU5N50D-E3 Datasheet Page 6 SIHU5N50D-E3 Datasheet Page 7 SIHU5N50D-E3 Datasheet Page 8

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SIHU5N50D-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds325pF @ 100V
FET Feature-
Power Dissipation (Max)104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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