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SIHU6N80E-GE3

SIHU6N80E-GE3

For Reference Only

Part Number SIHU6N80E-GE3
PNEDA Part # SIHU6N80E-GE3
Description MOSFET N-CHAN 800V TO-251
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 22,224
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHU6N80E-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHU6N80E-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHU6N80E-GE3, SIHU6N80E-GE3 Datasheet (Total Pages: 9, Size: 177.75 KB)
PDFSIHU6N80E-GE3 Datasheet Cover
SIHU6N80E-GE3 Datasheet Page 2 SIHU6N80E-GE3 Datasheet Page 3 SIHU6N80E-GE3 Datasheet Page 4 SIHU6N80E-GE3 Datasheet Page 5 SIHU6N80E-GE3 Datasheet Page 6 SIHU6N80E-GE3 Datasheet Page 7 SIHU6N80E-GE3 Datasheet Page 8 SIHU6N80E-GE3 Datasheet Page 9

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SIHU6N80E-GE3 Specifications

ManufacturerVishay Siliconix
SeriesE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs940mOhm @ 3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds827pF @ 100V
FET Feature-
Power Dissipation (Max)78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageIPAK (TO-251)
Package / CaseTO-251-3 Long Leads, IPak, TO-251AB

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