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SIJ400DP-T1-GE3

SIJ400DP-T1-GE3

For Reference Only

Part Number SIJ400DP-T1-GE3
PNEDA Part # SIJ400DP-T1-GE3
Description MOSFET N-CH 30V 32A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,372
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIJ400DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIJ400DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIJ400DP-T1-GE3, SIJ400DP-T1-GE3 Datasheet (Total Pages: 7, Size: 135.9 KB)
PDFSIJ400DP-T1-GE3 Datasheet Cover
SIJ400DP-T1-GE3 Datasheet Page 2 SIJ400DP-T1-GE3 Datasheet Page 3 SIJ400DP-T1-GE3 Datasheet Page 4 SIJ400DP-T1-GE3 Datasheet Page 5 SIJ400DP-T1-GE3 Datasheet Page 6 SIJ400DP-T1-GE3 Datasheet Page 7

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SIJ400DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7765pF @ 15V
FET Feature-
Power Dissipation (Max)5W (Ta), 69.4W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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