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SIJ438DP-T1-GE3

SIJ438DP-T1-GE3

For Reference Only

Part Number SIJ438DP-T1-GE3
PNEDA Part # SIJ438DP-T1-GE3
Description MOSFET N-CH 40V 80A PPAK SO-8L
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 27,978
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIJ438DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIJ438DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIJ438DP-T1-GE3, SIJ438DP-T1-GE3 Datasheet (Total Pages: 10, Size: 231.63 KB)
PDFSIJ438DP-T1-GE3 Datasheet Cover
SIJ438DP-T1-GE3 Datasheet Page 2 SIJ438DP-T1-GE3 Datasheet Page 3 SIJ438DP-T1-GE3 Datasheet Page 4 SIJ438DP-T1-GE3 Datasheet Page 5 SIJ438DP-T1-GE3 Datasheet Page 6 SIJ438DP-T1-GE3 Datasheet Page 7 SIJ438DP-T1-GE3 Datasheet Page 8 SIJ438DP-T1-GE3 Datasheet Page 9 SIJ438DP-T1-GE3 Datasheet Page 10

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SIJ438DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs182nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds9400pF @ 20V
FET Feature-
Power Dissipation (Max)69.4W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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