Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIJ478DP-T1-GE3

SIJ478DP-T1-GE3

For Reference Only

Part Number SIJ478DP-T1-GE3
PNEDA Part # SIJ478DP-T1-GE3
Description MOSFET N-CH 80V 60A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,258
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIJ478DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIJ478DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIJ478DP-T1-GE3, SIJ478DP-T1-GE3 Datasheet (Total Pages: 10, Size: 169.59 KB)
PDFSIJ478DP-T1-GE3 Datasheet Cover
SIJ478DP-T1-GE3 Datasheet Page 2 SIJ478DP-T1-GE3 Datasheet Page 3 SIJ478DP-T1-GE3 Datasheet Page 4 SIJ478DP-T1-GE3 Datasheet Page 5 SIJ478DP-T1-GE3 Datasheet Page 6 SIJ478DP-T1-GE3 Datasheet Page 7 SIJ478DP-T1-GE3 Datasheet Page 8 SIJ478DP-T1-GE3 Datasheet Page 9 SIJ478DP-T1-GE3 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIJ478DP-T1-GE3 Datasheet
  • where to find SIJ478DP-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIJ478DP-T1-GE3
  • SIJ478DP-T1-GE3 PDF Datasheet
  • SIJ478DP-T1-GE3 Stock

  • SIJ478DP-T1-GE3 Pinout
  • Datasheet SIJ478DP-T1-GE3
  • SIJ478DP-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIJ478DP-T1-GE3 Price
  • SIJ478DP-T1-GE3 Distributor

SIJ478DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs54nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1855pF @ 40V
FET Feature-
Power Dissipation (Max)5W (Ta), 62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

The Products You May Be Interested In

AON2408

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

14.5mOhm @ 8A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

782pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-DFN-EP (2x2)

Package / Case

6-UDFN Exposed Pad

IRLZ44Z

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

51A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13.5mOhm @ 31A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1620pF @ 25V

FET Feature

-

Power Dissipation (Max)

80W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

2SJ168TE85LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 50mA, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

85pF @ 10V

FET Feature

-

Power Dissipation (Max)

200mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-59

Package / Case

TO-236-3, SC-59, SOT-23-3

FQD4P40TF

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

2.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.1Ohm @ 1.35A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

680pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SQJA96EP-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

21.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Power Dissipation (Max)

48W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

Recently Sold

PMV65XP,215

PMV65XP,215

Nexperia

MOSFET P-CH 20V 2.8A SOT-23

A6H-8101

A6H-8101

Omron Electronics Inc-EMC Div

SWITCH SLIDE DIP SPST 25MA 24V

1N4007G

1N4007G

ON Semiconductor

DIODE GEN PURP 1KV 1A DO41

B39162B4300F210

B39162B4300F210

Qualcomm

FILTER SAW 1.575GHZ 5SMD

MC74HC00ADR2G

MC74HC00ADR2G

ON Semiconductor

IC GATE NAND 4CH 2-INP 14SOIC

MC33161PG

MC33161PG

ON Semiconductor

IC MONITOR VOLTAGE UNIV 8DIP

HSMG-C191

HSMG-C191

Broadcom

LED GREEN DIFFUSED CHIP SMD

NC7WZ00K8X

NC7WZ00K8X

ON Semiconductor

IC GATE NAND 2CH 2-INP US8

MF-R090

MF-R090

Bourns

PTC RESET FUSE 60V 900MA RADIAL

IHLP1212BZER1R5M11

IHLP1212BZER1R5M11

Vishay Dale

FIXED IND 1.5UH 3.8A 32 MOHM SMD

MT29F2G16ABBEAHC-AIT:E TR

MT29F2G16ABBEAHC-AIT:E TR

Micron Technology Inc.

IC FLASH 2G PARALLEL 63VFBGA

0451015.MRL

0451015.MRL

Littelfuse

FUSE BRD MNT 15A 65VAC/VDC 2SMD