Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIJH440E-T1-GE3

SIJH440E-T1-GE3

For Reference Only

Part Number SIJH440E-T1-GE3
PNEDA Part # SIJH440E-T1-GE3
Description MOSFET N-CH 40V 200A POWERPAK8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 20,376
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 12 - May 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIJH440E-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIJH440E-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIJH440E-T1-GE3, SIJH440E-T1-GE3 Datasheet (Total Pages: 7, Size: 195.08 KB)
PDFSIJH440E-T1-GE3 Datasheet Cover
SIJH440E-T1-GE3 Datasheet Page 2 SIJH440E-T1-GE3 Datasheet Page 3 SIJH440E-T1-GE3 Datasheet Page 4 SIJH440E-T1-GE3 Datasheet Page 5 SIJH440E-T1-GE3 Datasheet Page 6 SIJH440E-T1-GE3 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIJH440E-T1-GE3 Datasheet
  • where to find SIJH440E-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIJH440E-T1-GE3
  • SIJH440E-T1-GE3 PDF Datasheet
  • SIJH440E-T1-GE3 Stock

  • SIJH440E-T1-GE3 Pinout
  • Datasheet SIJH440E-T1-GE3
  • SIJH440E-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIJH440E-T1-GE3 Price
  • SIJH440E-T1-GE3 Distributor

SIJH440E-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs0.96mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs195nC @ 4.5V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds20330pF @ 20V
FET Feature-
Power Dissipation (Max)158W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 8 x 8
Package / Case8-PowerTDFN

The Products You May Be Interested In

IPP50R500CEXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

7.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

13V

Rds On (Max) @ Id, Vgs

500mOhm @ 2.3A, 13V

Vgs(th) (Max) @ Id

3.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

18.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

433pF @ 100V

FET Feature

Super Junction

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

DN3145N8-G

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

450V

Current - Continuous Drain (Id) @ 25°C

100mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

0V

Rds On (Max) @ Id, Vgs

60Ohm @ 100mA, 0V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

120pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-243AA (SOT-89)

Package / Case

TO-243AA

IPP086N10N3GHKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

8.6mOhm @ 73A, 10V

Vgs(th) (Max) @ Id

3.5V @ 75µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3980pF @ 50V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

IPP039N04LGHKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.9mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2V @ 45µA

Gate Charge (Qg) (Max) @ Vgs

78nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6100pF @ 25V

FET Feature

-

Power Dissipation (Max)

94W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

JAN2N7236U

Microsemi

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/595

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

220mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

4W (Ta), 125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-267AB

Package / Case

TO-267AB

Recently Sold

1N4148WX-TP

1N4148WX-TP

Micro Commercial Co

DIODE GEN PURP 75V 150MA SOD323

M24256-BRMN6TP

M24256-BRMN6TP

STMicroelectronics

IC EEPROM 256K I2C 1MHZ 8SO

ADT7411ARQZ-REEL

ADT7411ARQZ-REEL

Analog Devices

SENSOR DIGITAL -40C-120C 16QSOP

LT1963AEST-3.3#TRPBF

LT1963AEST-3.3#TRPBF

Linear Technology/Analog Devices

IC REG LINEAR 3.3V 1.5A SOT223-3

OKL-T/6-W12P-C

OKL-T/6-W12P-C

Murata Power Solutions

DC DC CONVERTER 0.591-5.5V 30W

CDBHD1100L-G

CDBHD1100L-G

Comchip Technology

BRIDGE RECT 1P 100V 1A MINI-DIP

MF-USMF075-2

MF-USMF075-2

Bourns

PTC RESET FUSE 6V 750MA 1210

USBUF01W6

USBUF01W6

STMicroelectronics

FILTER RC(PI) 33 OHM/47PF SMD

LQW2BHN22NJ03L

LQW2BHN22NJ03L

Murata

FIXED IND 22NH 720MA 90 MOHM SMD

CM200C32768AZFT

CM200C32768AZFT

Citizen Finedevice

CRYSTAL 32.7680KHZ 12.5PF SMD

AZ23C6V2-7-F

AZ23C6V2-7-F

Diodes Incorporated

DIODE ZENER ARRAY 6.2V SOT23-3

4608X-102-332LF

4608X-102-332LF

Bourns

RES ARRAY 4 RES 3.3K OHM 8SIP