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SIJH440E-T1-GE3

SIJH440E-T1-GE3

For Reference Only

Part Number SIJH440E-T1-GE3
PNEDA Part # SIJH440E-T1-GE3
Description MOSFET N-CH 40V 200A POWERPAK8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 20,376
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIJH440E-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIJH440E-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIJH440E-T1-GE3, SIJH440E-T1-GE3 Datasheet (Total Pages: 7, Size: 195.08 KB)
PDFSIJH440E-T1-GE3 Datasheet Cover
SIJH440E-T1-GE3 Datasheet Page 2 SIJH440E-T1-GE3 Datasheet Page 3 SIJH440E-T1-GE3 Datasheet Page 4 SIJH440E-T1-GE3 Datasheet Page 5 SIJH440E-T1-GE3 Datasheet Page 6 SIJH440E-T1-GE3 Datasheet Page 7

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SIJH440E-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs0.96mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs195nC @ 4.5V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds20330pF @ 20V
FET Feature-
Power Dissipation (Max)158W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 8 x 8
Package / Case8-PowerTDFN

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