SIPC07N50C3X1SA1
For Reference Only
| Part Number | SIPC07N50C3X1SA1 |
| PNEDA Part # | SIPC07N50C3X1SA1 |
| Description | TRANSISTOR N-CH |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,682 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 5 - May 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SIPC07N50C3X1SA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | SIPC07N50C3X1SA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SIPC07N50C3X1SA1 Datasheet
- where to find SIPC07N50C3X1SA1
- Infineon Technologies
- Infineon Technologies SIPC07N50C3X1SA1
- SIPC07N50C3X1SA1 PDF Datasheet
- SIPC07N50C3X1SA1 Stock
- SIPC07N50C3X1SA1 Pinout
- Datasheet SIPC07N50C3X1SA1
- SIPC07N50C3X1SA1 Supplier
- Infineon Technologies Distributor
- SIPC07N50C3X1SA1 Price
- SIPC07N50C3X1SA1 Distributor
SIPC07N50C3X1SA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | * |
| FET Type | - |
| Technology | - |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | - |
| Mounting Type | - |
| Supplier Device Package | - |
| Package / Case | - |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 61A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 26mOhm @ 30.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2730pF @ 25V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |
Manufacturer STMicroelectronics Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 525V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.6Ohm @ 2.2A, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 340pF @ 100V FET Feature - Power Dissipation (Max) 45W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer Global Power Technologies Group Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 170mOhm @ 9A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 950pF @ 25V FET Feature - Power Dissipation (Max) 94W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 78mOhm @ 2A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 505pF @ 20V FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-MCPH Package / Case 6-SMD, Flat Leads |
Manufacturer Renesas Electronics America Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 8.4mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V FET Feature - Power Dissipation (Max) 1W (Ta), 102W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HSON Package / Case 8-SMD, Flat Lead Exposed Pad |
