Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIR112DP-T1-RE3

SIR112DP-T1-RE3

For Reference Only

Part Number SIR112DP-T1-RE3
PNEDA Part # SIR112DP-T1-RE3
Description MOSFET N-CHAN 40V
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,142
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIR112DP-T1-RE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIR112DP-T1-RE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIR112DP-T1-RE3, SIR112DP-T1-RE3 Datasheet (Total Pages: 13, Size: 384.89 KB)
PDFSIR112DP-T1-RE3 Datasheet Cover
SIR112DP-T1-RE3 Datasheet Page 2 SIR112DP-T1-RE3 Datasheet Page 3 SIR112DP-T1-RE3 Datasheet Page 4 SIR112DP-T1-RE3 Datasheet Page 5 SIR112DP-T1-RE3 Datasheet Page 6 SIR112DP-T1-RE3 Datasheet Page 7 SIR112DP-T1-RE3 Datasheet Page 8 SIR112DP-T1-RE3 Datasheet Page 9 SIR112DP-T1-RE3 Datasheet Page 10 SIR112DP-T1-RE3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIR112DP-T1-RE3 Datasheet
  • where to find SIR112DP-T1-RE3
  • Vishay Siliconix

  • Vishay Siliconix SIR112DP-T1-RE3
  • SIR112DP-T1-RE3 PDF Datasheet
  • SIR112DP-T1-RE3 Stock

  • SIR112DP-T1-RE3 Pinout
  • Datasheet SIR112DP-T1-RE3
  • SIR112DP-T1-RE3 Supplier

  • Vishay Siliconix Distributor
  • SIR112DP-T1-RE3 Price
  • SIR112DP-T1-RE3 Distributor

SIR112DP-T1-RE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C37.6A (Ta), 133A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.96mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs89nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds4270pF @ 20V
FET Feature-
Power Dissipation (Max)5W (Ta), 62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

The Products You May Be Interested In

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

2.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.8Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id

6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

33.4nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1830pF @ 25V

FET Feature

-

Power Dissipation (Max)

42W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220 Isolated Tab

Package / Case

TO-220-3 Full Pack, Isolated Tab

AOWF412

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

SDMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

7.8A (Ta), 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7V, 10V

Rds On (Max) @ Id, Vgs

15.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

3220pF @ 50V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 33W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

-

Package / Case

TO-262-3 Full Pack, I²Pak

FDB6670AL

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

80A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2440pF @ 15V

FET Feature

-

Power Dissipation (Max)

68W (Tc)

Operating Temperature

-65°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263AB

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NTGS3441PT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

110mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

345pF @ 15V

FET Feature

-

Power Dissipation (Max)

510mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6

JANTXV2N7227

Microsemi

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/592

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

415mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

4W (Ta), 150W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-254AA

Package / Case

TO-254-3, TO-254AA (Straight Leads)

Recently Sold

NC7SV74K8X

NC7SV74K8X

ON Semiconductor

IC FF D-TYPE SNGL 1BIT US8

KSZ8081RNBCA-TR

KSZ8081RNBCA-TR

Microchip Technology

IC TRANSCEIVER FULL 1/1 32QFN

AD822AN

AD822AN

Analog Devices

IC OPAMP GP 2 CIRCUIT 8DIP

MAX1490BEPG+

MAX1490BEPG+

Maxim Integrated

IC TRANSCEIVER FULL 1/1 24DIP

DLW5BSN191SQ2L

DLW5BSN191SQ2L

Murata

CMC 5A 2LN 190 OHM SMD

BYV26C-TAP

BYV26C-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1A SOD57

NR4018T4R7M

NR4018T4R7M

Taiyo Yuden

FIXED IND 4.7UH 1.2A 108 MOHM

HSMS-285C-TR1G

HSMS-285C-TR1G

Broadcom

RF DIODE SCHOTTKY 2V SOT323

1N5254B

1N5254B

ON Semiconductor

DIODE ZENER 27V 500MW DO35

MC68HC908GP32CFB

MC68HC908GP32CFB

NXP

IC MCU 8BIT 32KB FLASH 44QFP

FPF2125

FPF2125

ON Semiconductor

IC LOAD SWITCH ADVANCED SOT23

GTL2002DC,125

GTL2002DC,125

NXP

IC TRNSLTR BIDIRECTIONAL 8VSSOP