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SIR406DP-T1-GE3

SIR406DP-T1-GE3

For Reference Only

Part Number SIR406DP-T1-GE3
PNEDA Part # SIR406DP-T1-GE3
Description MOSFET N-CH 25V 40A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,544
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIR406DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIR406DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIR406DP-T1-GE3, SIR406DP-T1-GE3 Datasheet (Total Pages: 13, Size: 236.72 KB)
PDFSIR406DP-T1-GE3 Datasheet Cover
SIR406DP-T1-GE3 Datasheet Page 2 SIR406DP-T1-GE3 Datasheet Page 3 SIR406DP-T1-GE3 Datasheet Page 4 SIR406DP-T1-GE3 Datasheet Page 5 SIR406DP-T1-GE3 Datasheet Page 6 SIR406DP-T1-GE3 Datasheet Page 7 SIR406DP-T1-GE3 Datasheet Page 8 SIR406DP-T1-GE3 Datasheet Page 9 SIR406DP-T1-GE3 Datasheet Page 10 SIR406DP-T1-GE3 Datasheet Page 11

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SIR406DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2083pF @ 10V
FET Feature-
Power Dissipation (Max)5W (Ta), 48W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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