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SIR622DP-T1-GE3

SIR622DP-T1-GE3

For Reference Only

Part Number SIR622DP-T1-GE3
PNEDA Part # SIR622DP-T1-GE3
Description MOSFET N-CH 150V 51.6A SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 57,408
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIR622DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIR622DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIR622DP-T1-GE3, SIR622DP-T1-GE3 Datasheet (Total Pages: 13, Size: 417.57 KB)
PDFSIR622DP-T1-RE3 Datasheet Cover
SIR622DP-T1-RE3 Datasheet Page 2 SIR622DP-T1-RE3 Datasheet Page 3 SIR622DP-T1-RE3 Datasheet Page 4 SIR622DP-T1-RE3 Datasheet Page 5 SIR622DP-T1-RE3 Datasheet Page 6 SIR622DP-T1-RE3 Datasheet Page 7 SIR622DP-T1-RE3 Datasheet Page 8 SIR622DP-T1-RE3 Datasheet Page 9 SIR622DP-T1-RE3 Datasheet Page 10 SIR622DP-T1-RE3 Datasheet Page 11

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SIR622DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesThunderFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C51.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs17.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs31nC @ 7.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1516pF @ 75V
FET Feature-
Power Dissipation (Max)104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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