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SIR626LDP-T1-RE3

SIR626LDP-T1-RE3

For Reference Only

Part Number SIR626LDP-T1-RE3
PNEDA Part # SIR626LDP-T1-RE3
Description MOSFET N-CHAN 60-V POWERPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,470
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIR626LDP-T1-RE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIR626LDP-T1-RE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIR626LDP-T1-RE3, SIR626LDP-T1-RE3 Datasheet (Total Pages: 13, Size: 391.32 KB)
PDFSIR626LDP-T1-RE3 Datasheet Cover
SIR626LDP-T1-RE3 Datasheet Page 2 SIR626LDP-T1-RE3 Datasheet Page 3 SIR626LDP-T1-RE3 Datasheet Page 4 SIR626LDP-T1-RE3 Datasheet Page 5 SIR626LDP-T1-RE3 Datasheet Page 6 SIR626LDP-T1-RE3 Datasheet Page 7 SIR626LDP-T1-RE3 Datasheet Page 8 SIR626LDP-T1-RE3 Datasheet Page 9 SIR626LDP-T1-RE3 Datasheet Page 10 SIR626LDP-T1-RE3 Datasheet Page 11

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SIR626LDP-T1-RE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C45.6A (Ta), 186A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs135nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5900pF @ 30V
FET Feature-
Power Dissipation (Max)6.25W (Ta), 104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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