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SIR664DP-T1-GE3

SIR664DP-T1-GE3

For Reference Only

Part Number SIR664DP-T1-GE3
PNEDA Part # SIR664DP-T1-GE3
Description MOSFET N-CH 60V 60A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 25,878
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIR664DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIR664DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIR664DP-T1-GE3, SIR664DP-T1-GE3 Datasheet (Total Pages: 13, Size: 306.85 KB)
PDFSIR664DP-T1-GE3 Datasheet Cover
SIR664DP-T1-GE3 Datasheet Page 2 SIR664DP-T1-GE3 Datasheet Page 3 SIR664DP-T1-GE3 Datasheet Page 4 SIR664DP-T1-GE3 Datasheet Page 5 SIR664DP-T1-GE3 Datasheet Page 6 SIR664DP-T1-GE3 Datasheet Page 7 SIR664DP-T1-GE3 Datasheet Page 8 SIR664DP-T1-GE3 Datasheet Page 9 SIR664DP-T1-GE3 Datasheet Page 10 SIR664DP-T1-GE3 Datasheet Page 11

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SIR664DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds1750pF @ 30V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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